Electrical power designs are driven by market needs for increased efficiency and improved productivity while conforming to regulatory requirements. The overriding end user need is almost always for ...
The QJD1210006 and QJD1210007 silicon carbide (SiC) MOSFET modules operate at –40° to 200°C, beyond those possible with silicon IGBT-based modules. The modules are constructed in half-bridge ...
Advances in EV technology to make them more practical. How SiC MOSFETs will help meet the current challenges in the EV arena. The all-important high switching speeds of SiC MOSFETs. Silicon-carbide ...
Members can download this article in PDF format. Traction inverters based on silicon insulated-gate bipolar transistors (IGBTs) have been the go-to technology for electric vehicles (EVs). However, to ...
19 new MOSFETs between 30V & 150V-Bvdss range offering up to 85 percent improvement in power densities and 3X more reliable than MOSFETs rated to the 150° C industry standard SAN JOSE, ...
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