CHANDLER, Ariz., Nov. 12, 2024 (GLOBE NEWSWIRE) -- Power components are evolving to meet the increasing demands for higher efficiency, smaller size and greater performance in power electronic systems.

CAMBRIDGE, England--(BUSINESS WIRE)--Cambridge GaN Devices (CGD), the fabless, clean-tech semiconductor company that develops energy-efficient GaN-based power devices that make greener electronics ...

For the PDF version of this article, including diagrams and/or equations, click here. The latest trench IGBTs optimized for appliance-motor controls display lower V CE ON and lower switching loss than ...

Microchip (MCHP) Technology announces its portfolio of IGBT 7 devices offered in different packages, multiple topologies, and current and voltage ranges. Featuring increased power capability, lower ...

IGBT product developments appear to have accelerated lately with the introduction of several discrete devices and modules aimed at a variety of growing IGBT product developments appear to have ...

We recently published a list of 15 AI News Stories Shaking Up Wall Street. In this article, we are going to take a look at where Microchip Technology Incorporated (NASDAQ:MCHP) stands against other AI ...

Fairchild’s 4th generation 650 V and 1200 V IGBT devices now offer lower switching loss by 30% for designing highly efficient and reliable industrial and automotive systems. Engineered by various ...

IGBT, stands for Insulated Gate Bipolar Transistor. It is a bipolar transistor with an insulated gate terminal. It combines a control input with a MOS structure and a bipolar power transistor in a ...

LED packaging service provider Para Light Electronics is setting up a Si-based IGBT (insulated gate bipolar transistor) power device packaging line at its factory in northern China with investment of ...

Trench-based silicon carbide power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) represent a dramatic improvement in the Figure of Merit (FOM) values of power conversion switching ...