The ACPL-337J is an advanced highly integrated gate drive optocoupler, designed to ISOLATE, DRIVE, PROTECT and FEEDBACK the IGBT’s operational status. It has a rail-to-rail output that can deliver 4A ...

The FOD8332 is an advanced 2.5 A output current IGBT drive optocoupler capable of driving medium power IGBTs with ratings up to 1,200 V and 150 A. It is suited for fast-switching driving of power ...

Most volume users of IGBT modules view the design of the gate drive circuit as a core competence, but now there is a a different approach to the design and deployment of power switching electronics, ...

It has been assumed that we are approaching the performance limits of silicon-based power electronics. Researchers have now challenged this belief by developing a miniaturized silicon insulated gate ...

High power IGBT modules employ hybrid IC gate drives including protection circuits that implement desaturation detection or real time control. ERIC R. MOTTO Powerex Inc. High power IGBT module ...

For the PDF version of this article, click here. Proper gate drive is critical to the performance and reliability of insulated gate bipolar transistor (IGBT) modules. The gate driver must produce high ...

SAN JOSE, Calif.--(BUSINESS WIRE)-- For today's high-power industrial applications, designers have traditionally used discrete components for the IGBT drivers, resulting in higher overall design ...

UK power firm Amantys Power Electronics has developed its next generation IGBT gate drive technology which is being demonstrated this week at the PCIM exhibition in Nuremberg. Called NG Gate Drive, it ...

Rutronik has announced the first intelligent integrated insulated gate bipolar transistor (igbt) drive optocoupler with integrated igbt protection. The PS9402 comprises a gallium aluminum arsenide ...

The PS9402 comprises a gallium aluminium arsenide (GaAIAs) led as the light emitting element and a light receiving IC. The device is designed to drive IGBTs (integrated insulated gate bipolar ...

NEWARK, DE / ACCESSWIRE / November 15, 2022 / The global Insulated Gate Bipolar Transistor (IGBT) market stands at US$ 7.7 Bn as of now and is expected to reach US$ 12.5 Bn by the year 2032 at a ...

SANTA CLARA, Calif.--(BUSINESS WIRE)--Renesas Electronics Corporation (TSE: 6723), a premier supplier of advanced semiconductor solutions, today announced the development of the R2A25110KSP ...