EDN

RF power transistors are based on LDMOS

The MRFE6S9046N, MRF8S9100H/HS, and MRF8S18120H/HS high-performance RF power transistors, are based on laterally diffused metal oxide semiconductor (LDMOS) technology, and incorporate enhancements ...
Electronic Design

Cool RF Transistors Pack A Mean Punch

Power-Amplifier (PA) and base-station manufacturers are faced with a series of similar problems. They both have a common interest in keeping base stations cool and minimizing cost. And they each have ...
EDN

Low thermal resistance technology enhances heat dissipation for high-power LDMOS RF transistor

Faced with rising energy prices, the broadcast industry seeks innovative ways to cut power and operating expenses. Freescale Semiconductor (NYSE:FSL, FSL.B) is addressing this market need with a ...
Electronic Design

GaN Devices Raising the Output-Power Performance Bar

What are the different materials are used in creating GaN power transistors? The impact of heat on performance. A rundown of high-power RF GaN transistors currently on the market. Solid-state power ...
The Manila Times

Finwave Semiconductor Highlights Expanded High-Power RF Switch Portfolio and X-Microwave Partnership at IMS2026

Built on its differentiated GaN-on-Si platform, Finwave’s RF solutions combine the performance advantages of GaN with the ...