Figure 1: Cross-sectional schematic of AlN-based MOSFET (Source: IOPSCIENCE) The MOSFET is a depletion-mode (d-mode), with a threshold voltage V th of -10.91 V and a high sub-threshold slope of 7.92 V ...

In addition, replacing SiC MOSFETs with GaN HEMTs ensures a substantial reduction in carbon footprint, as producing the former involves very high temperatures. AVL Dyno test setup with a VisIC D3GAN ...

The team has just determined that its approach – involving plasma nitridation of the SiC surface, sputter deposition of SiO 2 ...

Renesas 100-V N-channel MOSFETs leverage an improved wafer manufacturing process with split gate technology, reducing on-resistance (R DS(on)) by 30%. The REXFET-1 process also cuts total gate charge ...

New Renesas Wafer Technology Delivers 30 Percent Lower On-resistance, 40 Percent Reduction in Gate-Drain Charge, and 50 Percent Smaller Package Size TOKYO--(BUSINESS WIRE)-- Renesas Electronics ...

Aug. 2, 2024 — Scientists confirmed that much of ozone's increase in the upper troposphere is likely due to humans. A team detected a clear signal of human ... New Study Disputes Hunga Tonga ...

Everything you need to know about deforestation, including the damage clearing trees does to people, wildlife and the climate. When you purchase through links on our site, we may earn an affiliate ...