Navitas is now sampling 2.3-kV and 3.3-kV SiC MOSFETs in power-module, discrete, and known good die (KGD) formats.
Navitas Semiconductor has released sample units of its new 3300 V and 2300 V ultra-high-voltage silicon carbide (SiC) MOSFETs ...
A new technical paper titled “Next-generation tunnel FETs: exploring material perspectives and areal tunneling configurations ...
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