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Renesas 100-V N-channel MOSFETs leverage an improved wafer manufacturing process with split gate technology, reducing on-resistance (R DS(on)) by 30%. The REXFET-1 process also cuts total gate charge ...

In addition, replacing SiC MOSFETs with GaN HEMTs ensures a substantial reduction in carbon footprint, as producing the former involves very high temperatures. AVL Dyno test setup with a VisIC D3GAN ...

Looking for solutions in motor control, energy storage, or EVs? Discover how new MOSFETs could change the game for your applications. Renesas Launches New MOSFETs & New Manufacturing Process Renesas ...

The new MOSFETs offer a 30% lower on-resistance, a 40% reduction in gate-drain charge, and a 50% smaller package size. Renesas Electronics Corporation has launched new 100V high-power N-Channel ...

New Renesas Wafer Technology Delivers 30 Percent Lower On-resistance, 40 Percent Reduction in Gate-Drain Charge, and 50 Percent Smaller Package Size TOKYO--(BUSINESS WIRE)-- Renesas Electronics ...

Last April, Elon Musk, the billionaire owner of X, teased a mysterious “Unhinged Mode” for X’s AI-powered chatbot, Grok. Nearly a year later, xAI, the Musk-owned company behind Grok ...

Abstract: This paper compares and evaluates the single pulse short-circuit robustness of SiC MOSFETs with linear and hexagonal cell topologies under different gate voltages, bus voltages, and case ...

Automotive-qualified 40-V MOSFETs improve the efficiency and ruggedness for motor drives and DC-DC converters throughout the vehicle, as well as for cordless appliances and tools. Check out the ...